tm ?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FDB2614 rev. a FDB2614 200v n-cha nnel powertrench mosfet november 2006 FDB2614 200v n-channel powertrench mosfet general description this n-channel mosfet is produced using fairchild semicon - ductor?s advanced powertrenc h process that has been espe - cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? pdp application description ? 62a, 200v, r ds(on) = 22.9m ? @v gs = 10 v ? fast switching speed ? low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability d g s g s d absolute maximum ratings symbol parameter ratings unit v ds drain-source voltage 200 v v gs gate-source voltage 30 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 62 39.3 a a i dm drain current - pulsed (note 1) see figure 9 a e as single pulsed avalanche energy (note 2) 145 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 260 2.1 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c *drain current limited by maximum junction temperature thermal characteristics symbol parameter min. max. unit r jc thermal resistance, junction-to-case -- 0.48 c/w r ja * thermal resistance, junction-to-ambient* -- 40 c/w r ja thermal resistance, junction-to-ambient -- 62.5 c/w *when mounted on the minimum pad size recommended (pcb mount)
2 www.fairchildsemi.com FDB2614 rev. a FDB2614 200v n-cha nnel powertrench mosfet package marking and ordering information device marking device package reel size tape width quantity FDB2614 FDB2614 d 2 -pak 330mm 24mm 800 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 200 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.2 -- v/ c i dss zero gate voltage drain current v ds = 200v, v gs = 0v v ds = 200v, v gs = 0v, t j = 125 c -- -- -- -- 1 500 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 4.0 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 31a -- 22.9 27 m ? g fs forward transconductance v ds = 10v, i d = 31a (note 4) -- 72 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v f = 1.0mhz -- 5435 7230 pf c oss output capacitance -- 505 675 pf c rss reverse transfer capacitance -- 110 165 pf switching characteristics t d(on) turn-on delay time v dd = 100v, i d = 62a v gs = 10v, r gen = 25 ? (note 4, 5) -- 77 165 ns t r turn-on rise time -- 284 560 ns t d(off) turn-off delay time -- 103 220 ns t f turn-off fall time -- 162 335 ns q g total gate charge v ds = 100v, i d = 62a v gs = 10v (note 4, 5) -- 76 99 nc q gs gate-source charge -- 35 -- nc q gd gate-drain charge -- 18 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 62 a i sm maximum pulsed drain-source diode forward current -- -- 186 a v sd drain-source diode forward voltage v gs = 0v, i s = 62a -- -- 1.2 v t rr reverse recovery time v gs = 0v, i s = 62a di f /dt =100a/ s (note 4) -- 145 -- ns q rr reverse recovery charge -- 0.81 -- c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 1mh, i as = 17a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 62a, di/dt 100a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
figure 1. 0.1 1 10 1 10 100 * notes : 1. 250 s pulse test 2. t c = 25 o c v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 500 on-region characteristics figure 2. 2468 1 10 100 1000 -55 o c 150 o c * notes : 1. v ds = 10v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] transfer characteristics figure 3. 0 50 100 150 200 0.02 0.03 0.04 0.05 0.06 * note : t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.015 o n - r e s i s t a n c e v a r i a t i o n v s . d r a i n current and gate voltage figure 4. 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 * notes : 1. v gs = 0v 2. i d = 250 a t a = 25 o c t a = 150 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] body diode forward voltage varia - tion vs. source current and temperature figure 5. 0.1 1 10 0 3000 6000 9000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 capacitance characteristics figure 6. 0 20406080100 0 2 4 6 8 10 * note : i d = 62a v ds = 40v v ds = 100v v ds = 160v v gs , gate-source voltage [v] q g , total gate charge [nc] gate charge characteristics 3 www.fairchildsemi.com FDB2614 rev. a FDB2614 200v n-cha nnel powertrench mosfet
figure 7. breakdown voltage variation vs. temperature -100 -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] figure 8. on-resistance variation vs. tem- perature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10v 2. i d = 31a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] figure 9. 110100 0.01 0.1 1 10 100 1000 dc 10 ms 1ms 100 s i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 400 maximum safe operating area figure 10. maximum drain current vs. case - temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 70 i d , drain current [a] t c , case temperature [ o c ] figure 11. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -3 10 -2 10 -1 10 0 0.01 0.1 0.2 0.05 0.02 * notes : 1. z jc (t) = 0.48 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 transient thermal response curve 4 www.fairchildsemi.com FDB2614 rev. a FDB2614 200v n-cha nnel powertrench mosfet
5 www.fairchildsemi.com FDB2614 rev. a FDB2614 200v n-cha nnel powertrench mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductiv e switching test circuit & waveforms
6 www.fairchildsemi.com FDB2614 rev. a FDB2614 200v n-cha nnel powertrench mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com FDB2614 rev. a FDB2614 200v n-cha nnel powertrench mosfet
8 www.fairchildsemi.com 8 www.fairchildsemi.com FDB2614 200v n-cha nnel powertrench mosfet FDB2614 rev. a trademarks the following are registered and unregistered tr ademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the ri ght to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it co nvey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life suppor t device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power820417? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specif ications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor rese rves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i20
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